摘要 |
In the manufacturing of a heat-resistant composite material composed of a ceramic fiber preform impregnated in silicon carbide, to support both high growth rate and good filling uniformity at film formation of silicon carbide. By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used. |
申请人 |
IHI CORPORATION;THE UNIVERSITY OF TOKYO |
发明人 |
NAKAMURA, TAKESHI;ISHIZAKI, MASATO;FUCHIGAMI, KENJI;HOTOZUKA, KOZUE;SHIMOGAKI, YUKIHIRO;MOMOSE, TAKESHI;FUKUSHIMA, YASUYUKI;SATO, NOBORU;FUNATO, YUICHI;SUGIURA, HIDETOSHI |