| 摘要 |
<p>The present invention relates to a power semiconductor device. A power semiconductor device according to an embodiment comprises: a substrate; a first nitride semiconductor layer on the top of the substrate; a second nitride semiconductor layer on top of the first nitride semiconductor layer; a plurality of contacts arranged to be separated apart from each other on the second nitride semiconductor layer; and a metal layer arranged on a side surface or a lower surface of at least one opening unit formed by penetrating the substrate from a rear surface of the substrate.</p> |
