发明名称 Display apparatus and method of manufacturing the display apparatus
摘要 A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion. The display apparatus further includes a gate insulating layer disposed on the channel portion, a gate electrode disposed on the gate insulating layer, and a protective layer disposed on the gate electrode and the buffer layer and having a contact hole. The display apparatus further includes a transparent electrode overlapping a portion of the protective layer and electrically connected to one of the source electrode and the drain electrode through the contact hole. The transparent electrode includes a transparent metal layer and a transparent conductive oxide layer overlapping the transparent metal layer.
申请公布号 US9070605(B2) 申请公布日期 2015.06.30
申请号 US201414477626 申请日期 2014.09.04
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Ning Honglong;Kim Byeong-Beom;Kim Kyungseop;Park Joonyong;Jeong Changoh;Shin Sangwon;Lee Dongmin
分类号 H01L21/77;H01L27/12;H01L33/42;H01L33/00;H01L29/45;H01L29/786;H01L29/66 主分类号 H01L21/77
代理机构 Innovation Counsel LLP 代理人 Innovation Counsel LLP
主权项 1. A method of manufacturing a display apparatus, the method comprising: forming a buffer layer on a base substrate; forming an oxide semiconductor layer on the buffer layer; forming a gate insulating layer on a first portion of the oxide semiconductor layer; forming a gate electrode on the gate insulating layer; forming a protective layer on the gate electrode and the buffer layer, the protective layer having a first contact hole; processing a second portion of the oxide semiconductor layer such that an electrical resistance of the second portion of the oxide semiconductor layer is different from an electrical resistance of the first portion of the oxide semiconductor layer; forming a transparent metal layer that is electrically connected to the second portion of the oxide semiconductor layer through the first contact hole; and oxidizing a first portion of the transparent metal layer to form an oxide insulating layer.
地址 KR