发明名称 SEMICONDUCTOR DEVICES WITH INNER VIA
摘要 A semiconductor device includes a semiconductor substrate having an inactive area and a pair of active areas separated by the inactive area, a control terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area to define a conduction path during operation between a first conduction region in each active area and a second conduction region in each active area, a conduction terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area for electrical connection to each first conduction region, and a via extending through the semiconductor substrate, electrically connected to the conduction terminal, and positioned in the inactive area.
申请公布号 US2015179566(A1) 申请公布日期 2015.06.25
申请号 US201314136275 申请日期 2013.12.20
申请人 Hill Darrell G.;Tutt Marcel N. 发明人 Hill Darrell G.;Tutt Marcel N.
分类号 H01L23/522;H01L29/16;H01L21/768;H01L29/20 主分类号 H01L23/522
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate comprising an inactive area and a pair of active areas separated by the inactive area; a control terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area to define a conduction path during operation between a first conduction region in each active area and a second conduction region in each active area; a conduction terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area for electrical connection to each first conduction region; and a via extending through the semiconductor substrate, electrically connected to the conduction terminal, and positioned in the inactive area.
地址 Tempe AZ US