发明名称 |
SEMICONDUCTOR DEVICES WITH INNER VIA |
摘要 |
A semiconductor device includes a semiconductor substrate having an inactive area and a pair of active areas separated by the inactive area, a control terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area to define a conduction path during operation between a first conduction region in each active area and a second conduction region in each active area, a conduction terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area for electrical connection to each first conduction region, and a via extending through the semiconductor substrate, electrically connected to the conduction terminal, and positioned in the inactive area. |
申请公布号 |
US2015179566(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201314136275 |
申请日期 |
2013.12.20 |
申请人 |
Hill Darrell G.;Tutt Marcel N. |
发明人 |
Hill Darrell G.;Tutt Marcel N. |
分类号 |
H01L23/522;H01L29/16;H01L21/768;H01L29/20 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor substrate comprising an inactive area and a pair of active areas separated by the inactive area; a control terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area to define a conduction path during operation between a first conduction region in each active area and a second conduction region in each active area; a conduction terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area for electrical connection to each first conduction region; and a via extending through the semiconductor substrate, electrically connected to the conduction terminal, and positioned in the inactive area. |
地址 |
Tempe AZ US |