发明名称 SOLID-STATE IMAGING DEVICE
摘要 A solid-state imaging device (1) includes a light receiving unit (10), a row selection unit (20), a holding unit (30), a column selection unit (40), a reading unit (50), and a control unit (60). The light receiving unit (10) includes M×N pixel units (P1,1 to PM,N). The holding unit (30) includes 2N hold circuits (H1,1 to H2,N). In a first operation mode, the hold circuits (H1,n and H2,n) of the holding unit (30) operate in parallel to alternately perform data sampling and alternately perform data output. The reading unit (50) outputs data Dout according to an amount of light incident on a photodiode of the pixel unit (Pm,n) based on the data alternately output from the hold circuits (H1,n and H2,n) of the holding unit (30).
申请公布号 US2015181144(A1) 申请公布日期 2015.06.25
申请号 US201314415205 申请日期 2013.04.04
申请人 HAMAMATSU PHOTONICS K.K. 发明人 Sugiyama Yukinobu;Abe Tetsuya
分类号 H04N5/378 主分类号 H04N5/378
代理机构 代理人
主权项 1: A solid-state imaging device comprising: a light receiving unit including M×N pixel units P1,1 to PM,N arranged in M rows and N columns, each pixel unit Pm,n including a photodiode that generates an amount of charge according to an amount of incident light, and a charge accumulation portion that accumulates the charge, and the light receiving unit outputting data according to an accumulation charge amount in the charge accumulation portion; a holding unit including 2N hold circuits H1,1 to H2,N, each of the hold circuits H1,n and H2,n sampling, holding and outputting data output from any one of the M pixel units P1,n to PM,N on an nth column of the light receiving unit; a reading unit configured to receive data output from both or one of the hold circuits H1,n and H2,n of the holding unit, and output data according to an amount of light incident on the photodiode of the pixel unit Pm,n based on the received data; and a control unit configured to control an operation of each of the holding unit and the reading unit, wherein the control unit causes, in a first operation mode, the hold circuits H1,n and H2,n of the holding unit to operate in parallel to alternately perform data sampling and alternately perform data output, and the reading unit to output the data according to an amount of light incident on the photodiode of the pixel unit Pm,n, based on the data alternately output from the hold circuits H1,n and H2,n of the holding unit, and causes, in a second operation mode, the pixel unit Pm,n of the light receiving unit to output data of a noise component at a first time and output data according to the accumulation charge amount at a second time, one of the hold circuits H1,n and H2,n, of the holding unit to perform data sampling at the first time and the other to perform data sampling at the second time, and the reading unit to output the data according to an amount of light incident on the photodiode of the pixel unit Pm,n based on a difference between the data output from the respective hold circuits H1,n and H2,n of the holding unit (where M is an integer equal to or more than 1, N is an integer equal to or more than 2, m is an integer ranging from 1 to M, and n is an integer ranging from 1 to N).
地址 Hamamatsu-shi, Shizuoka JP