Nano-electro-mechanical based memory

摘要

A non-volatile memory arrangement (100) comprises a plurality of cells, each cell comprises a memory element (110) and a read selector (120) in series. The memory element (110) is a nano-electro-mechanical switch (110) comprising an anchor (111), a beam (114) fixed to the anchor (111), a first and second control gate (113), for controlling the position of the beam (114), a first output node (115) against which the beam (114) can be positioned. The cell also comprises a read selector (120) comprising a first selector terminal (121), a second selector terminal (122), the first selector terminal (121) connected to the first output node (115). The first respectively second control gates (112) of switches (110) of a same word are connected together by a first respectively second write word line (131) serving as control gate.