SEMICONDUCTOR DEVICE WITH CONFORMAL DOPING AND METHOD OF MAKING

摘要

A semiconductor arrangement is provided. The semiconductor arrangement includes a first semiconductor device. The first semiconductor device includes a first active region having a first doped region and a second doped region over the first doped region. The second doped region includes a first bottom portion and a first sidewall. The first bottom portion includes a first bottom portion inner surface, a first bottom portion outer surface, a first bottom portion height and a first bottom portion width. The first sidewall includes a first sidewall inner surface, a first sidewall outer surface, a first sidewall width and a first sidewall height, the first sidewall height greater than the first bottom portion height. A method of making a semiconductor device is also provided.

主权项

1. A semiconductor arrangement comprising:
a first semiconductor device comprising:
a first active region, the first active region comprising:
a first doped region; anda second doped region over the first doped region, the second doped region comprising:
a first bottom portion having a first bottom portion inner surface, a first bottom portion outer surface, a first bottom portion height and a first bottom portion width; anda first sidewall adjacent the first bottom portion having a first sidewall inner surface, a first sidewall outer surface, a first sidewall width and a first sidewall height, the first sidewall height greater than the first bottom portion height, wherein at least one of the first bottom portion or the first sidewall comprises a dopant gradient, the dopant gradient comprising: a first dopant concentration near at least one of the first bottom portion inner surface or the first sidewall inner surface; and a second dopant concentration near at least one of the first bottom portion outer surface or the first sidewall outer surface, the second dopant concentration being lower than the first dopant concentration.