Memory storage device and method of manufacturing the same

摘要

A memory storage device including a lower electrode formed to be separate for each of a plurality of memory cells; a memory storage layer formed on the lower electrode and capable of recording information according to a change in resistance; and an upper electrode formed on the memory storage layer. The memory storage device includes a first layer formed of metal or metal silicide and a second layer formed on the first layer and formed of a metal nitride, the lower electrode is formed by lamination of the first layer and the second layer and formed such that only the first layer is in contact with a lower layer and only the second layer is in contact with the memory storage layer, which is an upper layer. The memory storage layer and the upper electrode are formed in common to plural memory cells.

主权项

1. A resistance random access memory comprising:
a plug portion comprised of polysilicon; a first electrode on the plug portion; a memory storage portion on the first electrode; and a second electrode on the memory storage portion, wherein,
(a) the first electrode includes (1) a first portion comprised of a metal or a metal silicide and (2) a second portion on the first portion, the second portion comprised of a metal nitride, and(b) the first portion and the second portion are laminated such that the first portion is in contact with the memory storage portion.