Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

主权项

1. A semiconductor light emitting device, comprising:
a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions; a light emitting layer provided on the p-side region; a second semiconductor layer provided on the light emitting layer; a p-side electrode provided on the second semiconductor layer; a plurality of n-side electrodes provided respectively on the plurality of n-side regions; a first insulating film provided on the p-side electrode and on the plurality of n-side electrodes; a p-side interconnect unit provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film; a plurality of second vias provided respectively on the plurality of n-side electrodes and piercing the first insulating film; and an n-side interconnect unit provided on the first insulating film to commonly connect to the plurality of n-side electrodes through the plurality of second vias, wherein a bottom surface of the n-side interconnect unit is coplanar with a top surface of the first insulating film and with a to surface of each of the plurality of second vias, the plurality of n-side regions are separated from each other without being linked at the second surface, and the p-side region is provided around each of the n-side regions at the second surface.