| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for forming an amorphous silicon film having a smoother surface which enables the achievement of further reduction in film thickness.SOLUTION: A method for forming an amorphous silicon film comprises: a step which includes heating a base 2, and supplying aminosilane-based gas to the heated base 2, thereby causing the adsorption of aminosilane on and by the base 2; a step which includes heating the base 2 and supplying silane-based gas including no amino group to the heated base 2 with aminosilane adsorbed thereon, thereby forming an amorphous silicon film 4 on the base 2 with aminosilane adsorbed thereon; and a step which includes etching the amorphous silicon film 4, thereby reducing the film thickness of the amorphous silicon film 4. In the method, the aminosilane-based gas is selected from a group consisting of DIPAS, TDMAS and BDEAS.</p> |
