Variable Area Capacitive Lateral Acceleration Sensor and Preparation Method Thereof

摘要

The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.; the plurality of first bar structure electrodes on the first substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, the plurality of third bar structure electrodes on the third substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, and those two capacitor form differential sensitive capacitor structure. The present invention has the advantage of high sensitivity and good linearity, and different kinds of beam shapes may be designed as needed, to prepare capacitive acceleration sensors with different sensitivity, and the preparation has high flexibility.

主权项

1. A preparation method for a variable area capacitive lateral acceleration sensor, wherein said method for preparing the variable area capacitive lateral acceleration sensor at least including the steps of:
forming a plurality of first bar structure electrodes at recesses on a first substrate surface; forming a plurality of second bar structure electrodes at recesses on the two surface of a second substrate; bonding the first substrate surface and a second substrate surface into a first bonded structure, causing the plurality of first bar structure electrodes on the first substrate and a plurality of second bar structure electrodes on one surface of the second substrate to form capacitor structure, respectively, and the first substrate and the second substrate are electrically isolated; forming a movable seismic mass structure, a elastic beam structure and a anti-overloading structure on the second substrate of the bonded structure, and causing the plurality of the second bar structure electrodes to be positioned on the two surface of the movable seismic mass structure, respectively; forming a plurality of third bar structure electrodes at recesses on a third substrate; bonding the third substrate and the second substrate where the movable seismic mass structure has been formed into a second bonded structure, causing the plurality of third bar structure electrodes on the third substrate and a plurality of second bar structure electrodes on the other surface of the second substrate to form capacitor structure, respectively, and the third substrate and the second substrate are electrically isolated; forming electrode lead via-holes at the first substrate or the third substrate of the second bonded structure, and preparing electrodes.