Semiconductor device

摘要

A semiconductor device includes a field effect transistor that has a first nitride semiconductor layer and a second nitride semiconductor layer larger in bandgap than the first nitride semiconductor layer formed on a substrate in this order and a gate electrode, a source electrode, and a drain electrode, and uses two-dimensional electron gas formed at the interface between the first and second nitride semiconductor layers as the channel. The field effect transistor further has a p-type nitride semiconductor layer formed between the gate electrode and the drain electrode and electrically connected to the drain electrode.

主权项

1. A semiconductor device comprising a field effect transistor, the transistor having a first nitride semiconductor layer formed on a substrate, a second nitride semiconductor layer larger in bandgap than the first nitride semiconductor layer formed on the first nitride semiconductor layer, a gate electrode formed on the second nitride semiconductor layer, and a source electrode and a drain electrode formed to sandwich the gate electrode each being in contact with at least the second nitride semiconductor layer, the transistor using two-dimensional electron gas formed at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer as a channel,
wherein the field effect transistor further has a p-type nitride semiconductor layer formed on the second nitride semiconductor layer at a position between the gate electrode and the drain electrode and electrically connected to the drain electrode, and an n-type nitride semiconductor layer is formed between the p-type nitride semiconductor layer and the first nitride semiconductor layer.