Method of fabricating semiconductor device

摘要

Provided is a method of fabricating a semiconductor device including the following steps. A dummy gate structure is formed on a substrate, wherein the dummy gate structure includes a dummy gate and a stacked hard mask, and the stacked hard mask includes from bottom to top a first hard mask layer and a second hard mask layer. A spacer is formed on a sidewall of the dummy gate structure. A mask layer is formed on the substrate. An opening corresponding to the second hard mask layer is formed in the mask layer. The second hard mask layer is removed. The mask layer is removed. A dry etch process is performed to remove the first hard mask layer, wherein the dry etch process uses NF3 and H2 as etchants.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a dummy gate structure on a substrate, wherein the dummy gate structure comprises a dummy gate and a stacked hard mask, the stacked hard mask comprising, from bottom to top, a first hard mask layer and a second hard mask layer; forming a spacer on a sidewall of the dummy gate structure; forming a mask layer on the substrate; forming an opening in the mask layer, wherein the opening corresponds to the second hard mask layer; removing the second hard mask layer; removing the mask layer; and performing a dry etch process to remove the first hard mask layer, wherein the dry etch process uses NF3 and H2 as etchants.