| 发明名称 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A thin film transistor array substrate and a method of manufacturing the thin film transistor array substrate are provided. The thin film transistor array substrate may include: a substrate; a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain electrode on the substrate. The gate electrode may include a bottom gate electrode and a top gate electrode that covers upper and lateral surfaces of the bottom gate electrode. |
| 申请公布号 |
US2015102344(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414513476 |
申请日期 |
2014.10.14 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
SONG Yong-Duck;CHOI Jong-Hyun;SEO Jun-Seon |
| 分类号 |
H01L27/12;H01L21/3213;H01L29/66;H01L29/417;H01L29/786;H01L29/49 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor array substrate comprising:
a substrate; and a thin film transistor (TFT) comprising an active layer, a gate electrode, a source electrode, and a drain electrode on the substrate, wherein the gate electrode includes a bottom gate electrode and a top gate electrode that covers upper and lateral surfaces of the bottom gate electrode. |
| 地址 |
Yongin-City KR |
