Ambipolar transistor device and method of operating the device

摘要

This document describes an ambipolar transistor device comprising a semiconductor layer, a plurality of control electrodes and two or more charge transport electrodes. The charge transport electrodes include at least a source electrode and a drain electrode, and the control electrodes include a gate electrode. The charge transport electrodes are located in the device such as to be in contact with the semiconductor layer. The control electrodes are arranged such as to be electrically insulated from the semiconductor layer by an insulating layer. The control electrodes further comprise at least one auxiliary electrode, wherein the auxiliary electrode and the gate electrode are located in relation to the semiconductor layer at a same side thereof. The semiconductor layer is an ambipolar semiconductor layer comprising an ambipolar semiconductor material. The auxiliary electrode includes at least one of an auxiliary source electrode or an auxiliary drain electrode, to control for in use controlling the polarity of the ambipolar transistor by suitable charging biasing of the control electrodes such as to control charge concentrations and charge injection in said semiconductor layer.