METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY STOPPING PLANARIZATION OF INSULATING MATERIAL ON FINS

摘要

A method for fabricating a semiconductor device is provided, including forming a mask on a surface of a semiconductor substrate, creating isolation trenches within the substrate, and removing the mask from the substrate before depositing an insulating material within the trenches. The insulating material is then planarized to form a surface that is substantially coplanar with the surface of the semiconductor substrate.

主权项

1. A method comprising:
forming a mask on a surface of a silicon semiconductor substrate; creating one or a plurality of isolation trenches in the substrate; removing the mask from the substrate; after removing the mask from the substrate, depositing a first layer of insulating material within at least one trench wherein the insulating material extends above the surface of the semiconductor substrate; and before another layer of insulating material is deposited on the first layer of insulating material, planarizing the first layer of insulating material and stopping the planarizing directly on the silicon semiconductor substrate when a surface is formed that is substantially coplanar with the surface of the silicon semiconductor substrate.