NON-VOLATILE MEMORY PROGRAMMING

摘要

Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying a signal to a line associated with a memory cell, the signal being generated based on digital information. The method can also include, while the signal is applied to the line, determining whether a state of the memory cell is near a target state when the digital information has a first value, and determining whether the state of the memory cell has reached the target state when the digital information has a second value. Other embodiments including additional memory devices and methods are described.

主权项

1. An apparatus comprising:
a memory cell; and a module to:
apply a signal to an access line associated with the memory cell, the signal being generated based on digital information;determine whether the memory cell is near a target state when the digital information has a first value; anddetermine whether the memory cell has reached the target state when the digital information has a second value.