| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having suitable controllability.SOLUTION: A semiconductor memory device includes: a semiconductor substrate; a plurality of memory cells stacked above the semiconductor substrate; a first contact provided in a first contact region formed at end portions of the plurality of memory cells in a first direction, electrically connected to at least one of the plurality of memory cells, and extending in the stacking direction; wiring electrically connected to the first contact; and a second contact provided in a second contact region different from the first contact region, electrically connecting the wiring and the semiconductor substrate, and extending in the stacking direction. The first contact region and the second contact region of a first memory block are disposed so as to be shifted in the first direction to the first contact region and the second contact region of a second memory block disposed so as to be shifted in a second direction to the first memory block. |
