Non-volatile semiconductor memory device and reading method thereof

摘要

Provided are a semiconductor memory device has improved read disturbance characteristics as well as improved retention characteristics at a high temperature, and a reading method thereof. The non-volatile semiconductor memory device includes at least one bit line; and a cell string configured to be coupled with the bit line respectively, and include normal memory cells and dummy memory cells that are alternately coupled with each other, where normal data are programmed and read to and from the normal memory cells, and dummy memory cells are programmed with dummy data.

主权项

1. A non-volatile semiconductor memory device, comprising:
at least one bit line; and a cell string unit coupled with the bit line and including normal memory cells and dummy memory cells that are alternately coupled with each other, wherein normal data are programmed to and read from the normal memory cells, while dummy data are programmed in dummy memory cells, wherein the numbers of the normal memory cells and the dummy memory cells included in the cell string unit are the same.