发明名称 Bithmuth niobate dielectric composition having high dielectric permittivity and low dielectric loss
摘要 <p>PROBLEM TO BE SOLVED: To provide a composition showing a characteristic of a dielectric loss being extremely low while a dielectric constant of high dielectric constant is kept, and provide a dielectric material of a nano-sheet form which can be applied for the preparation of a low temperature element, being linear in a nano-level thin film, having an excellent dielectric constant and achieving insulation characteristics.SOLUTION: This invention relates to a niobate bismuth dielectric composition having high dielectric constant and low dielectric loss characteristics, in particular, a niobate bismuth dielectric composition having high dielectric constant and low dielectric loss characteristic, having a composition represented by chemical formula 1: KSrBiNbO(KSBNO), where molar fraction x is 0<x≤0.3, y is 4≤y≤6,δis 0≤x≤0.3.</p>
申请公布号 KR101495093(B1) 申请公布日期 2015.03.09
申请号 KR20130059870 申请日期 2013.05.27
申请人 发明人
分类号 C04B35/453;C04B35/495;H01B3/10;H01B17/56 主分类号 C04B35/453
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