SEMICONDUCTOR DEVICES HAVING METAL SILICIDE LAYERS AND METHODS OF MANUFACTURING SUCH SEMICONDUCTOR DEVICES

摘要

Provided are a semiconductor device and a method of manufacturing the semiconductor device. In order to improve reliability by solving a problem of conductivity that may occur when an air spacer structure that may reduce a capacitor coupling phenomenon between a plurality of conductive lines is formed, there are provided a semiconductor device including: a substrate having an active region; a contact plug connected to the active region; a landing pad spacer formed to contact a top surface of the contact plug; a contact conductive layer formed to contact the top surface of the contact plug and formed in a space defined by the landing pad spacer; a metal silicide layer formed on the contact conductive layer; and a landing pad connected to the contact conductive layer in a state in which the metal silicide layer is disposed between the landing pad and the contact conductive layer, and a method of manufacturing the semiconductor device.

主权项

1. A semiconductor device comprising:
a substrate having an active region; a contact plug electrically connected to the active region; a landing pad spacer that contacts a top surface of the contact plug; a contact conductive layer that contacts the top surface of the contact plug and that is formed in a space defined by the landing pad spacer; a metal silicide layer on the contact conductive layer; and a landing pad on the metal silicide layer opposite the contact conductive layer.