| 发明名称 |
OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE |
| 摘要 |
A Schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, wherein the oxide semiconductor layer contains a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0-5.6 eV, inclusive. |
| 申请公布号 |
WO2015025499(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
WO2014JP04153 |
申请日期 |
2014.08.08 |
| 申请人 |
IDEMITSU KOSAN CO.,LTD. |
发明人 |
TOMAI, SHIGEKAZU;SHIBATA, MASATOSHI;KAWASHIMA, EMI;YANO, KOKI;HAYASAKA, HIROMI |
| 分类号 |
H01L29/47;H01L29/06;H01L29/22;H01L29/861;H01L29/868;H01L29/872 |
主分类号 |
H01L29/47 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
