| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for manufacturing a high-reliability semiconductor device with high yield. <P>SOLUTION: A semiconductor device includes: an island-shaped semiconductor layer that is provided on a substrate and includes a channel formation region provided between a pair of impurity regions; a first insulating layer that is provided in contact with side surfaces of the semiconductor layer; a gate electrode that is provided on the channel formation region and is provided so as to cross the semiconductor layer; a second insulating layer that is provided between the channel formation region and the gate electrode; a third insulating layer that is formed above the semiconductor layer and on the gate electrode; and a conductive layer that is electrically connected to the impurity regions via the third insulating layer. The impurity regions have a region having a larger film thickness compared to the channel formation region, and the conductive layer is connected to the region having the larger film thickness. The second insulating layer covers at least the first insulating layer provided on the side surfaces of the semiconductor layer in a region with which the gate electrode is overlapped. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
