Fin field effect transistors and methods for fabricating the same

摘要

The disclosure relates to a Fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first fin and a second fin extending above the substrate top surface, wherein each of the fins has a top surface and sidewalls; an insulation layer between the first and second fins extending part way up the fins from the substrate top surface; a first gate dielectric covering the top surface and sidewalls of the first fin having a first thickness and a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness less than the first thickness; and a conductive gate strip traversing over both the first gate dielectric and second gate dielectric.

主权项

1. A Fin field effect transistor (FinFET) comprising:
a substrate comprising a top surface; a first fin and a second fin extending above the substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls; an insulation layer between the first and second fins extending part way up the fins from the substrate top surface; a first gate dielectric covering the top surface and sidewalls of the first fin having a first thickness t1, wherein the first gate dielectric is in direct contact with the first fin; a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness t2 less than the first thickness, wherein the second gate dielectric is in direct contact with the second fin; and a conductive gate strip traversing over both the first gate dielectric and the second gate dielectric.