| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP which enables the achievement of a higher polishing speed and high washability while suppressing the polishing flaw and dishing.SOLUTION: A polishing liquid for CMP of the present invention is used for polishing a film to be polished, and comprises: a polishing material slurry containing a polishing material, a dispersant and water; and an additive agent containing a carboxylic acid or a water-soluble organic polymer having carboxylate group, an inorganic acid, or an additive liquid containing an inorganic acid salt and water. In polishing, the polishing material slurry is mixed with the additive agent, the inorganic acid, or the additive liquid. The polishing material includes polishing material particles. The total content of at least one element selected from Ce, La, Pr, Nd, Sm and Eu, including at least Ce, in the polishing material particles is 81 mol% or more to the total amount of rare earth elements contained by the polishing material particles. The content of at least one element selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu is 19 mol% or less to the total amount of the rare earth elements contained by the polishing material particles. The polishing material particles each have a spherical form. |
