High-voltage integrated metal capacitor and fabrication method

摘要

A high-voltage metal capacitor with easy integration into existing semiconductor manufacturing processes can provide isolation capacitors up to several kilovolts. The capacitor includes a support layer with internal structure, including a lower place, a bond pad on the support layer, an upper plate disposed on the support layer, the upper plate being arranged above the lower plate, a dielectric layer, at least part of which is between the lower and upper plates, and a passivation layer, at least part of which covers at least part of the upper plate and part of the dielectric layer. A first opening extends from the surface through the passivation and dielectric layers to the lower plate, and a second opening extends from the surface through the passivation layer to the upper plate. A method of manufacturing the capacitor.

主权项

1. An integrated circuit capacitor, comprising:
a support layer having an internal integrated circuit structure, including a lower plate; a bond pad disposed directly on the support layer such that the bond pad and the support layer are contiguous; an upper plate disposed on the support layer, the upper plate being arranged above the lower plate; a dielectric layer, at least a portion of which is arranged between the lower plate and the upper plate; a passivation layer, at least a portion of which covers at least a portion of the upper plate and at least a portion of the dielectric layer, the passivation layer having a surface; a first opening extending from the surface through the passivation layer and the dielectric layer to the bond pad; a second opening extending from the surface through the passivation layer to the upper plate; and wherein the dielectric layer and the passivation layer are distinct layers.