| 摘要 |
本发明之根据一实施例之半导体装置包括：形成于绝缘膜上之多晶半导体层，该多晶半导体层包括第一区域及各具有较该第一区域大之宽度之第二及第三区域，该等第二及第三区域中之一者系连接至该第一区域；至少形成于该多晶半导体层之该第一区域之侧面上之闸极绝缘膜；形成于该闸极绝缘膜上之闸极电极；及由绝缘材料制成之闸极侧壁，该闸极侧壁系形成于该等第二及第三区域之侧部上之该闸极电极之侧面上。该第一区域中每单位体积杂质含量大于该等第二及第三区域中每单位体积杂质含量。; a gate insulating film formed at least on side faces of the first region of the polycrystalline semiconductor layer; a gate electrode formed on the gate insulating film; and gate sidewalls made of an insulating material, the gate sidewalls being formed on side faces of the gate electrode on sides of the second and third regions. Content of an impurity per unit volume in the first region is larger than content of the impurity per unit volume in the second and third regions. |
