| 摘要 |
<p>According to the present invention, a method to diagnose a defect in a heater of a plasma chemical vapor deposition (CVD) apparatus is capable of determining a defect in a heater by a voltage signal change applied to the heater of the plasma CVD apparatus, thereby being able to check a replacement time of the heater. Also, the method to diagnose a defect in a heater of a plasma CVD apparatus divides the voltage signal in a waiting section and a radio frequency (RF) section, compares a zero-crossing rate with a defect reference in the waiting section, and compares a mean-crossing rate with the defect reference in the RF section; thereby determining more accurately a defect in the heater. Also, the method to diagnose a defect in a heater of a plasma CVD apparatus uses a method to diagnose a defect based on a Gaussian-mixed model to compare each log-likelihood value of the waiting section and the RF section with the defect reference, thereby determining more accurately the defect in the heater. Also, the method to diagnose a defect in a heater of a plasma CVD apparatus divides the voltage signal in the waiting section and the RF section, compares the zero-crossing rate with the defect reference in the waiting section, and compares short-time energy with the defect reference in the RF section; thereby determining more accurately the defect in the heater.</p> |
