| 摘要 |
<p>Provided is a semiconductor device showing stable high-frequency characteristics. A semiconductor device includes the following configuration. A diffusion region into which acceptors are introduced is formed in a silicon substrate. In addition, a non-diffusion region into which the acceptors are not introduced is disposed in the silicon substrate alternately with the diffusion region. In addition, a first insulating layer is provided so as to contact with the silicon substrate. Further, an interconnect is provided on the first insulating layer.</p> |
