| 摘要 |
PROBLEM TO BE SOLVED: To prevent a defect caused by an operation of a parasitic bipolar transistor of a short MOS transistor in a semiconductor device provided with an output MOS transistor and the short MOS transistor.SOLUTION: A semiconductor device comprises: an output MOS transistor which has a drain connected to a power supply and a source connected to an output terminal; a short MOS transistor which has a source connected to an output terminal and is formed on a semiconductor substrate connected to a power supply; and a switch element which includes a semiconductor region which is formed on the semiconductor substrate, a first diffusion layer which is formed in the semiconductor region and connected to a gate of the output MOS transistor, and a second diffusion layer which is formed in the semiconductor region and connected to a drain of the short MOS transistor. The switch element is turned on or turned off depending on potential of the semiconductor region. |
