HARD MASK FOR BACK-END-OF-LINE (BEOL) INTERCONNECT STRUCTURE

摘要

A method of fabricating an interconnect structure on a wafer and an interconnect structure are provided. A dielectric layer is provided on the wafer. An interconnect is formed by etching a recess into the dielectric layer, where the etching utilizes a hard mask that includes a first layer deposited over the dielectric layer. The interconnect is planarized using a chemical mechanical polishing (CMP) process, where the first layer remains on the dielectric layer at a completion of the CMP process. The first layer or a portion of the first layer is transformed into a nitride layer or an oxide layer after the CMP process.

主权项

1. A method of fabricating an interconnect structure on a wafer, the method comprising:
providing a dielectric layer on the wafer; forming an interconnect by etching a recess into the dielectric layer, the etching utilizing a hard mask that includes a first layer deposited on the dielectric layer; planarizing the interconnect using a chemical mechanical polishing (CMP) process, wherein the first layer remains on the dielectric layer at a completion of the CMP process; and transforming the first layer or a portion of the first layer into a nitride layer or an oxide layer after the CMP process.