SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To lessen a base metal film of a wiring which forms a semiconductor integrated circuit device and a semiconductor substrate in contact resistance between them. CONSTITUTION:A silicide layer 12 which is made of combined material composed of the component atoms of a base metal film 10a and a semiconductor substrate 1 and epitaxial to the semiconductor substrate 1 is provided to a contact surface between the base metal film 10a of a wiring 10 which forms a semiconductor integrated circuit device and a semiconductor layer 5 located on the semiconductor substrate 1.