| 摘要 |
The purpose of the invention is to provide a sputtering target formed from a Cu-Ga alloy having a Ga composition of 29 at% or more.
[Problem] Since a Cu-Ga alloy becomes a brittle ³ phase-single phase structure when the Ga composition becomes 29 at% or more, it cannot be subject to processes such as rolling and forging. Accordingly, the crystal grain size of the cast structure must be small and uniform so that the cast structure can be used as is. [Solution] It is possible to produce a melted and cast Cu-Ga alloy sputtering target containing 29 to 42.6 at% of Ga, and remainder being Cu and unavoidable impurities by continuously solidifying the Cu-Ga alloy sputtering target under solidifying conditions of a constant cooling rate or higher, wherein an average crystal grain size of a sputter front face is 3 mm or less, and a cross section structure of the target is a columnar structure that has grown in a direction from the sputter front face toward a center plane which is parallel to a sputter face. |
