Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques

摘要

An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.

主权项

1. A method of forming a pattern recognition mark, comprising:
forming a first hard mask layer on a layer of material; forming a second hard mask layer on said first hard mask layer; forming a memorization layer on said second hard mask layer; forming a first patterned photoresist mask above said memorization layer, said first patterned photoresist mask having a first feature pattern corresponding to at least a first portion of said pattern recognition mark; performing at least one first etching process through said first patterned photoresist mask on said memorization layer to transfer said first feature pattern to said memorization layer and thereby define a partially patterned memorization layer; forming a second patterned photoresist mask above said partially patterned memorization layer, said second patterned photoresist mask having a second feature pattern corresponding to at least a second portion of said pattern recognition mark; performing at least one second etching process through said second patterned photoresist mask on said partially patterned memorization layer to transfer said second feature pattern to said partially patterned memorization layer and thereby define a fully patterned memorization layer having a memorization layer pattern; performing at least one third etching process through said fully patterned memorization layer on said second hard mask layer to define said pattern recognition mark in a fully patterned second hard mask layer; and performing at least one fourth etching process through said fully patterned second hard mask layer on said first hard mask layer and said layer of material to define a pattern recognition mark in said layer of material.