| 摘要 |
The present invention provides a light-emitting device manufactured with use of a compound semiconductor substrate comprising at least: a p-type cladding layer; a multiple-active layer portion in which three or more active layers made of (AlxGa1-x)yIn1-yP (0≦̸x≦̸0.6, 0.4≦̸y≦̸0.6) and two or more barrier layers having a higher Al content rate x than the active layers are alternately laminated; and an n-type cladding layer, wherein the barrier layer on a side close to the p-type cladding layer has a smaller band gap than that of the barrier layer on a side close to the n-type cladding layer in the barrier layers, and the compound semiconductor substrate has a superlattice barrier layer between the multiple-active layer portion and the n-type cladding layer or in the n-type cladding layer. As a result, the light-emitting device having long life duration, low resistance, and high light-emitting efficiency (especially internal quantum efficiency) can be provided. |
