FinFET body contact and method of making same

摘要

A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming a semiconductor fin on a substrate; forming a first gate structure on a top surface and sidewalls of the semiconductor fin; forming a second gate structure on the top surface and sidewalls of the semiconductor fin, the second gate structure being laterally spaced from the first gate structure; forming a third gate structure on the top surface and sidewalls of the semiconductor fin, the third gate structure being laterally spaced form the first gate structure in a direction opposite from the second gate structure; forming a first source/drain region in the semiconductor fin, the first source/drain region being laterally between the first gate structure and the second gate structure; forming a second source/drain region in the semiconductor fin, the second source/drain region being laterally between the first gate structure and the third gate structure; forming a first body contact in the semiconductor fin, the first body contact being laterally spaced from first source/drain region, the second gate structure being laterally between the first source/drain region and the first body contact; and forming a second body contact in the semiconductor fin, the second body contact being laterally spaced from second source/drain region, the third gate structure being laterally between the second source/drain region and the second body contact.