Group III nitride semiconductor optical device

摘要

A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

主权项

1. A group III nitride semiconductor optical device comprising:
a group III nitride semiconductor substrate, made of a group III nitride semiconductor, having a main surface forming a finite angle with a reference plane orthogonal to a reference axis extending in a c-axis direction of the group III nitride semiconductor; and an active layer of a quantum-well structure, disposed on the main surface of the group III nitride semiconductor substrate, including a well layer made of a group III nitride semiconductor and a plurality of barrier layers made of a group III nitride semiconductor; wherein the main surface exhibits semipolarity; wherein the active layer is an epitaxial layer and has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3; and wherein the plurality of barrier layers contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in a near-interface area in contact with an interface of the well layer on the group III nitride semiconductor substrate side.