Image sensor and manufacturing method thereof

摘要

An image sensor includes: a photoelectric conversion pixel having a photoelectric conversion element that performs photoelectric conversion, and a light guide formed of a first material in an interlayer insulation film above the photoelectric conversion element; and a light-shielded pixel having a photoelectric conversion element that performs photoelectric conversion, a light guide formed of a second material that is different from the first material in an interlayer insulation film above the photoelectric conversion element, and a light-shielding layer formed above the light guide.

主权项

1. An image sensor comprising:
a plurality of photoelectric conversion pixels each of which includes a photoelectric conversion element, multiple wiring layers positioned above the photoelectric conversion element, interlayer insulation films formed among the multiple wiring layers, and a light guide formed of a first material in the interlayer insulation films; and a plurality of light-shielded pixels each of which includes a photoelectric conversion element, multiple wiring layers positioned above the photoelectric conversion element, interlayer insulation films formed among the multiple wiring layers, a light guide formed of a second material in the interlayer insulation films, and a light-shielding layer which is formed of a wiring layer among the multiple wiring layers, formed above the light guide, that shields the photoelectric conversion element and the light guide, wherein a dielectric constant of the first material is set to a value different from that of the second material so as to reduce a difference between parasitic capacitances of the light-shielded pixels and the photoelectric conversion pixels.