| 发明名称 | Method of making a lithography mask | ||
| 摘要 | A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure. | ||
| 申请公布号 | US8916482(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201213437075 | 申请日期 | 2012.04.02 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lee Hsin-Chang;Lin Yun-Yue;Hsieh Hung-Chang;Chen Chia-Jen;Su Yih-Chen;Lien Ta-Cheng;Yen Anthony |
| 分类号 | H01L21/31 | 主分类号 | H01L21/31 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of forming a lithography mask comprising: providing a substrate; forming an opaque layer on the substrate; patterning the opaque layer to form a patterned mask; and selectively applying a stress-relief treatment to different portions of the patterned mask by exposing the different portions to a radiation. | ||
| 地址 | Hsin-Chu TW | ||