| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a formation method of a manganese oxide film capable of forming a manganese oxide film not having adverse effect on a copper wiring layer while maintaining the barrier properties required as the barrier film of the copper wiring layer.SOLUTION: A lower layer copper wiring layer on a substrate, and a silicon-containing oxide film as an interlayer film thereon are formed, and on a structure where a recess reaching the lower layer copper wiring layer is formed in the silicon-containing oxide film, a manganese oxide film is formed as a barrier film. The manganese oxide film is formed by ALD method, and a predetermined thickness is obtained by adjusting the number of repetition times so that the manganese oxide film thus obtained has an allowable barrier properties on the silicon-containing oxide film, and has an allowable resistance when the recess is filled with copper on the lower layer copper wiring layer exposed.</p> |
