| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate achieving a high level of reduction of warpage of a substrate and a high level of speed performance of a device. SOLUTION: The compound semiconductor substrate includes a substrate made of Si single crystal, an intermediate layer of nitride semiconductor formed on a main surface of the substrate, and a compound semiconductor layer of the nitride semiconductor formed on the main surface of the intermediate layer, wherein an oxygen concentration of the substrate is 0.2×10<SP>18</SP>to 1.4×10<SP>18</SP>atoms/cm<SP>3</SP>, a resistance value is 1000Ωcm or higher, and a total film thickness of the intermediate layer and the compound semiconductor layer in a direction perpendicular to the main surface is 450-4500 nm. COPYRIGHT: (C)2011,JPO&INPIT |
