发明名称 |
FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE |
摘要 |
A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate. |
申请公布号 |
US2014342127(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201313894954 |
申请日期 |
2013.05.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Dimitrakopoulos Christos D.;Fogel Keith E.;Kim Jeehwan;Park Hongsik |
分类号 |
B32B37/26;B32B9/04 |
主分类号 |
B32B37/26 |
代理机构 |
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代理人 |
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主权项 |
1. A method for transfer of a two-dimensional material, comprising:
forming a spreading layer of a two-dimensional material on a first substrate, the spreading layer having at least one monolayer; forming a stressor layer on the spreading layer, the stressor layer being configured to apply stress to a closest monolayer of the spreading layer; exfoliating the closest monolayer by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer; stamping the closest monolayer against a second substrate to adhere remnants of the two-dimensional material on the closest monolayer to the second substrate to provide a single monolayer on the stressor layer; and transferring the single monolayer to a third substrate. |
地址 |
Armonk NY US |