发明名称 RADIATION-EMITTING SEMICONDUCTOR CHIP
摘要 A radiation-emitting semiconductor chip includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence extends in a vertical direction between a first major face and a second major face; the semiconductor layer sequence includes an active region that generates radiation, a first region of a first conduction type and a second region of a second conduction type differing from the first conduction type; the first region extends in a vertical direction between the first major face and the active region; the second region extends in a vertical direction between the second major face and the active region; at least one layer of the active region is based on an arsenide compound semiconductor material; and relative to its respective extent in the vertical direction, the first region or the second region is based in a proportion of at least half on a phosphide compound semiconductor material.
申请公布号 US2014339498(A1) 申请公布日期 2014.11.20
申请号 US201214344532 申请日期 2012.07.30
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 Behringer Martin R.;Klemp Christoph;Tångring Ivar;Heidborn Peter
分类号 H01L33/30;H01L33/00;H01L33/06 主分类号 H01L33/30
代理机构 代理人
主权项
地址 Regensburg DE