发明名称 |
RADIATION-EMITTING SEMICONDUCTOR CHIP |
摘要 |
A radiation-emitting semiconductor chip includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence extends in a vertical direction between a first major face and a second major face; the semiconductor layer sequence includes an active region that generates radiation, a first region of a first conduction type and a second region of a second conduction type differing from the first conduction type; the first region extends in a vertical direction between the first major face and the active region; the second region extends in a vertical direction between the second major face and the active region; at least one layer of the active region is based on an arsenide compound semiconductor material; and relative to its respective extent in the vertical direction, the first region or the second region is based in a proportion of at least half on a phosphide compound semiconductor material. |
申请公布号 |
US2014339498(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201214344532 |
申请日期 |
2012.07.30 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
Behringer Martin R.;Klemp Christoph;Tångring Ivar;Heidborn Peter |
分类号 |
H01L33/30;H01L33/00;H01L33/06 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Regensburg DE |