发明名称 |
EXTERNAL UV LIGHT SOURCES TO MINIMIZE ASYMMETRIC RESIST PATTERN TRIMMING RATE FOR THREE DIMENSIONAL SEMICONDUCTOR CHIP MANUFACTURE |
摘要 |
Embodiments of the present invention provide an apparatus and methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one embodiment, a method of forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises supplying a trimming gas mixture including at least an oxygen containing gas, and providing a light energy in the trimming gas mixture to an edge of the substrate during the trimming process. |
申请公布号 |
US2014335695(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201313892039 |
申请日期 |
2013.05.10 |
申请人 |
Applied Materials, Inc. |
发明人 |
LUERE Olivier;JOUBERT Olivier |
分类号 |
H01L21/3065;H01L21/67 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming stair-like structures on a substrate, comprising:
performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises:
supplying a trimming gas mixture including at least an oxygen containing gas; andproviding a light energy in the trimming gas mixture to an edge of the substrate during the trimming process. |
地址 |
Santa Clara CA US |