发明名称 EXTERNAL UV LIGHT SOURCES TO MINIMIZE ASYMMETRIC RESIST PATTERN TRIMMING RATE FOR THREE DIMENSIONAL SEMICONDUCTOR CHIP MANUFACTURE
摘要 Embodiments of the present invention provide an apparatus and methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one embodiment, a method of forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises supplying a trimming gas mixture including at least an oxygen containing gas, and providing a light energy in the trimming gas mixture to an edge of the substrate during the trimming process.
申请公布号 US2014335695(A1) 申请公布日期 2014.11.13
申请号 US201313892039 申请日期 2013.05.10
申请人 Applied Materials, Inc. 发明人 LUERE Olivier;JOUBERT Olivier
分类号 H01L21/3065;H01L21/67 主分类号 H01L21/3065
代理机构 代理人
主权项 1. A method of forming stair-like structures on a substrate, comprising: performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises: supplying a trimming gas mixture including at least an oxygen containing gas; andproviding a light energy in the trimming gas mixture to an edge of the substrate during the trimming process.
地址 Santa Clara CA US