Semiconductor Device and Power Converter

摘要

A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n−-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n−-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n−-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n−-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip. Moreover, it is possible to avoid problems of “snap back” and “current concentration.”

主权项

1. A semiconductor device, comprising:
a semiconductor layer of a first conductivity type; a first semiconductor region that is arranged in contact with the semiconductor layer on a first face side of the semiconductor layer and has a second conductivity type that is a conductivity type reverse to the first conductivity type; a gate electrode that is provided in a trench provided so as to penetrate the first semiconductor region and reach to the semiconductor layer through a gate insulating film; a second semiconductor region of the first conductivity type provided so as to contact the trench on the first face side of the first semiconductor region; a first high-concentration semiconductor region of the first conductivity type that is arranged in contact with a second face side that is aside reverse to the first face side of the semiconductor layer; and a second high-concentration semiconductor region of the second conductivity type that is arranged in contact with the second face side of the first high-concentration semiconductor region, wherein a junction of the first high-concentration semiconductor region and the second high-concentration semiconductor region is a tunnel junction.