发明名称 Plasma processing and substrate processing system
摘要 <p>In a substrate treatment system including multiple treatment chambers around a substrate transfer chamber, an increase in apparatus floor area due to installation of additional treatment chambers is reduced. A plasma treatment apparatus according to one embodiment of the present invention includes: a treatment chamber; a substrate holder for holding the substrate; plasma generation unit for forming plasma; multiple gate valves for installation and removal of the substrate; a shield for surrounding the plasma formed by the plasma generation unit; and substrate transfer unit for transferring the substrate through the gate valves. The substrate transfer unit is shielded from the plasma by the shield.</p>
申请公布号 GB201417376(D0) 申请公布日期 2014.11.12
申请号 GB20140017376 申请日期 2012.11.21
申请人 CANON ANELVA CORPORATION 发明人
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