| 摘要 |
<p>Suggested is a technique of manufacturing semiconductor device which easily controls an etching process in forming a contact hole. A semiconductor layer is formed on at least an insulating surface. A first insulating layer is formed on the semiconductor layer. A gate electrode is formed on the first insulating layer. A second insulating layer is formed on the gate electrode. An opening part is formed on at least semiconductor layer and the second insulating layer to partly expose the insulating surface. A conducive layer is formed on the second insulating layer across the opening part. At this time, here, the conducive layer is electrically connected to the semiconductor layer in a side of the opening prat formed on the semiconductor layer.</p> |
