METHOD OF OPERATING SILICON MONOCRYSTALLINE INGOT GROWING APPARATUS WHICH CAN PREVENT MELT LEAKAGE

摘要

The present invention relates to a method of operating a silicon monocrystalline ingot growing apparatus and, more particularly, to a method of operating a silicon monocrystalline ingot growing apparatus which can prevent melt leakage through a crucible crack generated by a dent during an operation of a quartz crucible. The silicon monocrystalline ingot growing apparatus according to the present invention comprises: a crucible which is liftably provided within a vacuum chamber and in which a stack of polysilicon is supplied and fused by a heat source of a heater installed in proximity to the outer surface thereof. The method of operating the silicon monocrystalline ingot growing apparatus according to the present invention comprises: a first melt step for starting melting polysilicon in a state where polysilicon is supplied in the crucible, and when the stack of polysilicon is divided into three height portions of high, medium and low, the highest temperature portion heated by the heater is in the high portion.