发明名称 |
Fin-Last FinFET and Methods of Forming Same |
摘要 |
Embodiments of the present disclosure are a FinFET device, and methods of forming a FinFET device. An embodiment is a method for forming a FinFET device, the method comprising forming a semiconductor strip over a semiconductor substrate, wherein the semiconductor strip is disposed in a dielectric layer, forming a gate over the semiconductor strip and the dielectric layer, and forming a first recess and a second recess in the semiconductor strip, wherein the first recess is on an opposite side of the gate from the second recess. The method further comprises forming a source region in the first recess and a drain region in the second recess, and recessing the dielectric layer, wherein a first portion of the semiconductor strip extends above a top surface of the dielectric layer forming a semiconductor fin. |
申请公布号 |
US2014327046(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201414330970 |
申请日期 |
2014.07.14 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Yu-Lien;Wann Clement Hsingjen;Tsai Ming-Huan |
分类号 |
H01L29/78;H01L29/16;H01L29/165;H01L27/092 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A FinFET device comprising:
a dielectric layer on a semiconductor substrate; a semiconductor fin extending from the semiconductor substrate, wherein the semiconductor fin is disposed in the dielectric layer; a first source region and a first drain region disposed in the semiconductor fin, wherein the first source region and the first drain region comprise a first epitaxial material, wherein the first source region and the first drain region have sidewalls that are substantially orthogonal to a top surface of the semiconductor substrate; a first channel region in the semiconductor fin, wherein the first channel region is laterally between the first source region and the first drain region; and a first gate structure over the semiconductor fin, wherein the first gate structure is over the first channel region. |
地址 |
Hsin-Chu TW |