| 发明名称 |
Power Module with Integrated Current Sensor |
| 摘要 |
A power module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The power module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region. |
| 申请公布号 |
US2014327436(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201313886352 |
申请日期 |
2013.05.03 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Castro Serrato Carlos |
| 分类号 |
G01R33/07;G01R33/09;H01L43/06;H01L25/16;H01L25/00 |
主分类号 |
G01R33/07 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power module, comprising:
a first substrate having a metallized side; a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate; a semiconductor die interposed between the first and second substrates, the semiconductor die having a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate; and a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate, the sensor aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region. |
| 地址 |
Neubiberg DE |
